Quad N and P channel MOSFETS from Advanced Power Electronics
News Release from:
Advanced Power Electronics Corp.
18 October 2012
Advanced Power Electronics have unveiled new quad complementary N- and P-channel enhanced-mode MOSFETs that target full bridge applications such as servo and DC motors. Simple to drive and with a low on-resistance, the AP9930GM-HF-3 devices are available in a standard SO-8 package commonly used in surface mount industrial designs.
N-channel performance ratings include: Drain Source Voltage of 30V; RDS(ON) of 33mOhm; and Continuous Drain Current of 5.5A.
For the P-channel, VDS is -30V, RDS(ON) is 55mOhm and ID is -4.1A. The package is halogen-free and compliant with both current RoHS and REACH environmental requirements for hazardous materials.
Comments Ralph Waggitt, President/CEO, Advanced Power Electronics: “These new quad MOSFETs provide designers with the best possible combination of fast switching, low on resistance and cost effectiveness.”
