InGaN laser, Osram,

OSRAM develops direct emitting green InGaN laser with 50 mW

News Release from: OSRAM Opto Semiconductors
13 August 2009

OSRAM Opto Semiconductors has succeeded in manufacturing the first direct emitting green laser diode from the InGaN (indium-gallium-nitride) material system with a high optical output. Laboratory results at the pre-development stage show that it already achieves an optical output of 50 mW and emits light in true green with a wavelength of 515 nm.

Compared with semiconductor lasers based on existing technology that operate with frequency doubling, direct emitting green lasers are more compact, offer greater temperature stability, are easier to control and have higher modulation capability at several hundred MHz.

Green lasers are used in a variety of medical and industrial applications, and also as light sources in mobile mini-projectors. A direct emitting green laser can help make these projectors even smaller, with even better performance.