Memory
Ramtron gets Grade 1 automotive qualification for nonvolatile state savers
Ramtron International has announced that two of its nonvolatile state savers, the FM1105-GA and FM1106-GA, have received AEC-Q100 Grade 1 qualification. The state saver device saves the state of signals on demand and restores them to the correct state automatically upon power up. F-RAM technology uniquely enables this capability due to its fast write time, virtually unlimited write endurance, and low-power requirements.
Toshiba to launch world’s first 32nm process NAND flash memory
Toshiba will reinforce its leadership in the development and fabrication of high density NAND flash memory when it starts shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit single chips, offering the largest density of any NAND flash chip, are available from today, and 16Gb chip products, the current mainstream density, will be available in July in Japan. The 32Gb chips will first be applied to memory cards and USB memories and subsequently extended to embedded products.
Power efficient 512-Kilobit and 1-Megabit Serial F-RAM V-Family memory
Ramtron has launched two more devices in a family of new parallel and serial F-RAM products that offer higher-speed read/write performance, lower voltage operation, and optional device features. The newest devices in Ramtron's V-Family of F-RAM products are the 512-Kilobit FM24V05, and the 1-Megabit FM24V10. The new products are 2.0 to 3.6-volt, serial nonvolatile RAMs in 8-pin SOIC packages that use the two-wire (I2C) protocol.
Microchip Expands Serial EEPROM Product Line
Microchip announces several new I2C serial EEPROM devices in small packages. The company has unveiled a series of 4, 64 and 128kbit serial EEPROMs in a innovative Waver-Level Chip Scale Package (WLCSP). Additionally, the company introduced the industry's first 1 and 2kbit I2C serial EEPROMs in a 5-pin SC-70 package, and the industry's first 32 and 64kbit serial EEPROMs in a 5-pin SOT-23 package. The small, innovative devices complement industry trends towards smaller and more sophisticated designs and are ideal for a wide range of portable and consumer-electronic applications.
Microchip Claims Industry’s Lowest Voltage EEPROM Devices
Microchip has announced a series of I2CTM EEPROM devices with the lowest operating voltage available on the market. The 24VLXX series of devices has an operating voltage down to 1.5V for both read and write operations, with a very low operating current of less than 400µA.
Toshiba Advances NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology
Toshiba has announced breakthroughs in multi-bit-per-cell technology for NAND flash memories that will bring advances in chip densities and cost savings to next generation devices. In the 32 nanometer (nm) generation, Toshiba has realized a 3-bit-per-cell 32 gigabit (Gb) chip with the world-smallest die size, and smaller than a 2-bit-per-cell 16Gb chip fabricated with 43nm technology, which is currently in the market. The cutting-edge chip will be mass produced in the second half of CY2009. The company has also fabricated the world's first 64Gb chip that applies 4-bit-per-cell technology at the 43 nm process generation.
Ramtron's foundry agreement with IBM
U.S. semiconductor maker Ramtron has announced that it has entered into a foundry services agreement with IBM. The companies plan to install Ramtron's F-RAM semiconductor process technology in IBM's Burlington, Vermont, advanced wafer manufacturing facility. Once installed, the new foundry supply will serve as a foundation for the introduction of new and cost effective high-performance F-RAM semiconductor products.
Innovative Silicon To Present Floating Body Memory Array Results At ISSCC
Innovative Silicon, Inc. (ISi), developer of the Z-RAM zero-capacitor floating body memory technology has announced the upcoming delivery of a presentation titled "A 2ns-Read-Latency 4MB Embedded Floating Body Memory Macro in 45nm SOI Technology" in collaboration with AMD at the International Solid State Circuits Conference (ISSCC).
Ramtron announces low power 256-Kilobit Serial F-RAM
Ramtron has announced the FM24L256, a 256Kb, 2.7- to 3.6-volt nonvolatile F-RAM memory device with a high-speed serial I2C memory interface. The FM24L256 provides high-performance data collection in a tiny, 8-pin package, cutting costs and board space in a range of applications from multi-function printers to industrial motor controllers.
Ramtrom's FM22LD16 FBGA package option for 4-megabit parallel nonvolatile F-RAM memory
Ramtron has announced the availability of its 4-megabit (Mb) F-RAM memory in a streamlined FBGA package. The FM22LD16 is a 4Mb, 3-volt, parallel nonvolatile RAM in a 48-pin ball grid array (FBGA) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM22LD16 targets industrial control systems such as robotics, network and data storage applications, multi-function printers, auto navigation systems and a host of other SRAM-based system designs. Ramtron's 4Mb parallel F-RAM is also available in a 44-pin thin small outline plastic (TSOP) package.
Microchip's Stand-Alone Serial SRAM Devices
Microchip has announced a family of 8- and 32-kByte stand-alone serial SRAM devices designed to increase a system's available RAM through adding small, inexpensive external devices. The 23A640, 23K640 (23 x 640), 23A256 and 23K256 (23 x 256) devices feature a familiar, industry standard SPI interface, providing increased design flexibility while reducing design and production costs.
Toshiba, IBM, and AMD Claim World’s Smallest FinFET SRAM Cell with High-k/Metal Gate
Toshiba Corporation, IBM, and AMD have announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world's smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs).
Serial EEPROMs With Built-in MAC Addresses From Microchip
Microchip has announced a family of serial EEPROM devices with built-in EUI-48 and EUI-64 compatible MAC addresses. Designed to work on standard buses, such as SPI, I2C and the UNI/O bus, the devices provide easy and inexpensive access to MAC addresses and feature up to 1.5Kbit of EEPROM that can be used for storing configuration and user settings, or as a scratch-pad area for buffering small amounts of data.
16GB microSDHC from Toshiba
Toshiba Electronics Europe (TEE) has reinforced its memory card line-up with the launch of a 16GB microSDHC card offering the largest capacity available in the market. At the same time, the company extended its range of industry-leading memory card solutions by adding ultra fast read/write 8GB and 16GB SDHC cards to its line-up. Mass production of the new SDHC cards will start in December, with production of the new microSDHC due to start in January 2009.
Ramtron adds serial 512-kilobit F-RAM to V-Family product line
Ramtron International has announced the second serial device in a family of new F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The FM25V05 is a 512-kilobit (Kb), 2.0V to 3.6V, serial peripheral interface (SPI) nonvolatile RAM in an 8-pin SOIC package that features fast access, NoDelay writes, 1E14 read/write cycles, and low power consumption. The FM25V05 is an ideal alternative to serial Flash and serial EEPROM memory in industrial control, metering, medical, automotive, military, gaming, and computing applications, among others. In addition to the 512Kb FM25V05, the recently announced 1-megabit FM25V10 is also available.
Ramtron announces faster and power flexible 1-megabit parallel F-RAM
Ramtron International Corporation today launched the first parallel device in a family of new parallel and serial F-RAM products that offer higher-speed read/write performance, lower voltage operation, and optional device features. The newest device in Ramtron's V-Family of F-RAM products is the FM28V100, a 1-megabit (Mb), 2.0V to 3.6V, parallel nonvolatile RAM in a 32-pin TSOP-I package that features fast access, NoDelay™ writes, virtually unlimited read/write cycles, and low power consumption. The FM28V100 is an ideal upgrade from 1Mb battery-backed SRAM in industrial control, metering, medical, automotive, military, gaming, and computing applications, among others. In addition to the FM28V100, Ramtron recently announced the 512Kb FM25V05 and 1Mb FM25V10 serial SPI V-Family products.
Renesas Technology develops SRAM for automotive applications
Renesas Technology Europe today announced that it has commenced development of low power and fast SRAM products that are specifically suited to automotive applications. They are available as 4, 16, or 32Mbit low power SRAM and 4Mbit fast SRAM devices. Sample shipments will commence during June 2009 followed by mass production during July 2009.
Toshiba to launch 43nm SLC NAND Flash memory
Toshiba has announced the launch of a new line-up of 43nm single-level cell (SLC) NAND Flash memory products available in densities ranging from 512Mbits to 64 gigabits (Gb) and in a total of 16 versions. The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate monolithic 16Gb chips fabricated with 43nm generation process technology, the highest density chips available. The new devices will start to come to market in the first quarter of 2009.
Toshiba launches USB Flash Drives with new design and higher capacities
Toshiba Electronics Europe has announced the introduction of a new range of USB flash memory drives that feature a redesigned case and a maximum memory capacity of 16GByte, double that of existing products. The stylish design is shorter than previous models and also more robust. The drives will be showcased at the GITEX Technology Week in Dubai.
Innovative Silicon Unveils Z-RAM Memory Technology Breakthroughs
Innovative Silicon has demonstrated that its Z-RAM memory technology continues to show considerable advantages over DRAM implementations and other proposed floating body memory designs. Dr. Mikhail Nagoga, a principal member of ISi's technical staff, presented a paper written by Dr. Serguei Okhonin, chief scientist at ISi, that describes the smallest silicon dynamic memory devices ever reported, with the largest programming window. Separately, Dr. Ammar Nayfeh, a member of ISi's technical staff, presented a paper that discusses improvements in Z-RAM memory retention times and a reduction in leakage current.
Ramtron announces 1-megabit serial F-RAM
Ramtron International has announced the first device in a family of new F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The first device in Ramtron's V-Family of F-RAM products is the FM25V10, a 1-megabit (Mb), 2.0 to 3.6-volt, serial peripheral interface (SPI) nonvolatile RAM in an 8-pin SOIC package that features fast access, NoDelay™ writes, 1E14 read/write cycles, and low power consumption.
SST Expands 1.8V Serial Flash Product Portfolio
SST (Silicon Storage Technology, Inc.) today announced the SST25WF040 device, the company's newest addition to its widely adopted 1.8V 25WF Series SPI serial flash memory family. The 4-Mbit, small form factor SST25WF040 is ideal for battery-powered, space- and height-constrained mobile applications where performance, reliability and low-power consumption are crucial to product success. The SST25WF040 continues SST's commitment to provide the industry with innovative flash memory technology that addresses the unique design requirements of the high-volume portable electronics market.
New Toshiba SD card range delivers premium quality and performance for consumer and professional needs
Toshiba Electronics Europe has announced the launch of a new range of SD format Flash memory cards that offer the widest choice for all uses from premium consumer applications to high-speed professional requirements.
64-kilobit serial F-RAM memory specified to AEC-Q100 automotive standards from Ramtron
Ramtron International has expanded its line of AEC-Q100-specified F-RAM memory devices, qualifying the FM24CL64 64-kilobit (Kb) serial F-RAM to operate over the Grade 3 automotive temperature range of -40ºC to +85ºC. The FM24CL64 is part of Ramtron's growing family of Grade 1 (+125ºC) and Grade 3 AEC-Q100-qualified automotive memory products.
F-RAM replaces EEPROM for faster writes at lower power in safe, explosion-proof product
Ramtron International has announced that China's Shanghai Welltech Automation Co., Ltd., a leading pressure transmitter and magnetic flow meter supplier, has designed Ramtron's FM25L16 16-kilobit (Kb) serial F-RAM memory device into its 2000S safe pressure transmitters. F-RAM was selected to replace EEPROM in Welltech's new, intrinsically safe, explosion-proof transmitters.
Serial EEPROM Family from Microchip Uses Single I/O Bus
Microchip has announced a family of serial EEPROM devices with a single I/O bus interface. The 11XX010, 11XX020, 11XX040, 11XX080 and 11XX160 are the first single I/O EEPROM devices that can support data rates from 10 kHz to 100 kHz; and the only 1, 2, 4, 8 and 16 Kbit EEPROMs available in a 3-pin SOT-23 package (in addition to other higher pin count packages). The new devices also include advanced such as status registers; software write protection for ¼, ½ or full array; noise filtering, and robust ESD protection for the highest reliability.
Ramtron launches 2-Megabit Serial F-RAM
Ramtron International has unveiled the industry's first 2-megabit serial F-RAM memory in an 8-lead TDFN (5.0 x 6.0 mm) package. Manufactured on an advanced 130 nanometer CMOS process, the FM25H20 is a high-density nonvolatile F-RAM memory that operates at low power and features a high-speed serial peripheral interface (SPI). The 3-volt, 2Mb serial F-RAM writes at maximum bus speed with virtually unlimited endurance for greater data collection capacity in a tiny package, enabling system designers to reduce costs and board space in a range of advanced applications including meters and printers.
Ramtron's 64-kilobit F-RAM enhanced processor companion with embedded 32kHz crystal
Ramtron International has launched the FM3135, a 64-kilobit (Kb), 3-volt Processor Companion product that combines the benefits of nonvolatile F-RAM memory with an enhanced real-time clock/calendar (RTC) and integrated 32kHz watch crystal.
High-Endurance Industrial-Grade NANDrive from SST
SST (Silicon Storage Technology, Inc.) has announced three additions to its NANDrive family of ATA solid-state storage devices. The new 512 MByte, 1 GByte and 2 GByte NANDrive products are capable of operating at industrial temperature ranges, making them compelling storage options for industrial applications operating in harsh environments, including medical equipment, factory automation and in-cabin automotive electronics.
Toshiba Launches Solid State Drives with MLC Devices
Toshiba Electronics Europe has announced its entry into the emerging market for NAND-flash-based solid state drive (SSD) with a series of products featuring multilevel-cell (MLC) NAND flash memories. Offered in a range of form factors and densities, Toshiba's solid state drives are designed primarily for notebook PCs. They will be showcased at the Consumer Electronics Show in Las Vegas, from January 7th to 10th. Samples and mass production will follow from the first quarter (January to March) of next year.
Grade 1 automotive F-RAM memory devices from Ramtron
Ramtron International has added another 4 kilobit (Kb) F-RAM memory device to its Grade 1 AEC-Q100-qualified automotive product line, growing its number of +125ºC parts to five. The FM25040A-GA – a 4Kb, 5V F-RAM with a high-speed serial peripheral interface (SPI) – is now specified to operate at +125ºC and is guaranteed to retain data for 9,000 hours at that extreme temperature.
Ramtron’s F-RAM wins EDN China’s Industry Innovation award
Ramtron International Corporation has announced that it has received the Leading Product accolade in this year's prestigious EDN China Innovation Awards. Ramtron's FM22L16, the semiconductor industry's first 4-megabit (Mb) nonvolatile F-RAM memory, was selected by a panel of judges and thousands of EDN China readers as a Leading Product in the Digital IC and Digital Logic category.
Innovative Silicon Wins Prestigious Audemars Piguet “Changing Times Award”
Innovative Silicon Inc. (ISi), the developer of Z-RAM high-density memory intellectual property (IP), has announced that it has won the Audemars Piguet 2007 "Next Gem" award, one of three awards within the Audemars Piguet "Changing Times Award" program. The "Next Gem" award is given to the private company with the most promising future of making the biggest impact, on the largest number of people, in the least amount of time.
Embedded-FRAM device for digital TV enables simultaneous use of 4-channel HDMI connector ports
Fujitsu Microelectronics Europe has announced the development of what it says is the world's first embedded-FRAM device for digital TVs that enables simultaneous use of four-channel High-Definition Multimedia Interface connector ports - for connecting devices such as multiple DVD recorders, camcorders, and video game consoles – and which stores display data, such as resolution, that is read by audio-visual digital entertainment devices when they are used with digital TVs.
FRAM memory device qualified to +125ºC for intelligent powertrain applications
Ramtron International has expanded its line of +125 degreesC FRAM memory automotive devices. The FM25L04-GA , a 4Kb, 3 volt, serial peripheral interface (SPI) FRAM, is now Grade 1 AEC-Q100-specified to operate over the automotive temperature range of -40ºC to +125ºC and is guaranteed to retain data for 9,000 hours at that extreme temperature.
FRAM memory designed into fimicro's PC/104-compliant single board computer and smart I/O modules
Ramtron International has announced that German-based embedded hardware and software provider, fimicro, has integrated non-volatile FRAM memory into its new active104 series of PC/104-compliant single board computer (SBC) and smart I/O extension modules.
Ramtron expands high density FRAM family with a 2-megabit device
Ramtron International has extended its family of high density FRAM devices with a 2-megabit parallel memory device. The FM21L16 is a 2Mb, 3-volt, parallel non-volatile FRAM in a 44-pin TSOP-II package that features fast access, NoDelay writes, virtually unlimited read/write cycles, and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM21L16 targets SRAM-based industrial control, metering, medical, automotive, military, gaming, and computing applications, among others.
Toshiba Adds New 32GB and 16GB High Density SDHC Cards and 8GB microSDHC Card to Extensive Memory Card Line-up
Toshiba Electronics Europe has reinforced its line-up of SD High Capacity (SDHC) cards with three new cards, including the world's first 32-gigabyte (GB) memory card in this high density. Alongside the 32GB SDHC card, Toshiba also announced a 16GB SDHC card and an 8GB microSDHC card. All the new cards meet the Class 4 specification in the SD Speed Class, ensuring they deliver the high level performance and functionality essential for advanced mobile phones and other personal digital products.
STMicroelectronics Guarantees Full-Speed Operation of 32-Mbit Serial Flash Memory with Dual I/O
STMicroelectronics has announced the availability of the new M25PX32, a 32-Mbit device that is the first of the sector, sub-sector erase Serial Flash family to be offered with Dual I/O. Whereas existing M25PE family devices features high granularity, the new M25PX family stands out thanks to its guaranteed high-speed performance.
FRAM memory designed into DSP-based digital car audio system for Renault Samsung Motors
Ramtron International has announced that Daesung-Eltec Co. Ltd. of Korea has designed FRAM memory into its new digital signal processing (DSP)-based car audio platform. Daesung-Eltec selected the FM24C64 - a 64-kilobit FRAM with 2-wire serial interface – to enable sophisticated memory functions such as storing audio, channel and favourite artist/song settings, as well as the resume play and the favourite artist/song alert features. FRAM's non-volatility, No Delay writes, virtually limitless endurance, small footprint and cost effectiveness make it the ideal memory technology for advanced digital automotive audio systems.
