Space-Ready Memory Goes Extra Terrestrial
What are the embedded memory options when your application is high rel? Vanessa Knivett investigates in this article from ES Design magazine.
Alliance Memory announces the new low-power 32M CMOS SRAM AS6C3216
Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 32M IC (2M x 16 / 4M x 8 switchable), the company's highest density low-power device to date. Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns, the AS6C3216 is optimized for low-power industrial, telecom, medical, and automotive applications, and it is particularly well-suited for battery backup non-volatile memory.
3D PLUS Introduces First Space Grade 72b Wide DDR2 3D2D4G72UB3478
3D PLUS today introduced the first space grade 72b wide DDR2 3D2D4G72UB3478. The 3D2D4G72UB3478 is a high-speed highly integrated DDR2 Synchronous Dynamic Ram Memory. It is organized as 64M x72b.
3D PLUS Announces A New 32 Mb PROM Memory
3D PLUS introduces a new 32Mb PROM - 3DPO32M08VS1419 to its space grade PROM family, to follow the successful 64Mb PROM launched two years ago. The 3DPO32M08VS1419 is a highly integrated One-Time-Programmable Rom Memory designed to store configuration bitstreams for FPGA devices, such as Xilinx Virtex FPGAs.
ADATA Introduces XPG Gaming v2.0 Series DDR3 2600G
ADATA Technology today announces the start of shipments of its latest advance in gaming technology, the XPG Gaming v2.0 Series DDR3 2600G DRAM 8GB modules. These dual channel kits are designed and engineered to bring gamers and enthusiasts optimum performance for their high-end systems.
Alliance Memory Introduces New High-Speed CMOS Synchronous DRAMs With 128-Mb and 256-Mb Densities in 54-Ball TFBGA Package
Alliance Memory today extended its 128M and 256M lines of high-speed CMOS synchronous DRAMs with new devices in a 54-ball 8 mm by 8 mm by 1.2 mm TFBGA package. These 8M x 16 and 16M x 16 SDRAMs feature fast access time from clock down to 4.5 ns at a 5-ns clock and clock rates of 143 MHz.
Altis Semiconductor Introduces the Next Generation of Embedded CBRAM Technology
Altis announced today the next generation of embedded CBRAM (eCBRAM) technology, a new platform available for demonstration in Q2 2013. The new technology features design and manufacturing improvements which deliver higher reliability and faster write speeds.
HOLTEK New HT24LC256 High Capacity Serial EEPROM
HOLTEK Semiconductor's new EEPROM device, the HT24LC256, with its 2-wire serial interface has a total capacity of 256K bits arranged in a 32768 x 8 bits structure. The device has a working voltage range from 2.2V to 5.5V and a maximum operating frequency of 400kHz.
Microsemi High Temperature Flash Memory Products Withstand Environmental Challenges of Deeper Oil and Gas Drilling
Microsemi Corporation today announced its launch of high temperature flash memory products, tailored to meet the environmental demands of oil and gas industries' downhole drilling. The new high-temperature NOR flash products are designed for temperatures of 150°C and higher, and provide improved endurance benefits to systems designers.
New 1 Mbit And 2 Mbit SPI FRAM Products From Fujitsu Semiconductor
Fujitsu have today revealed the launch of two new FRAM products, MB85RS1MT and MB85RS2MT. Featuring 1 Mbit and 2 Mbit memory densities, respectively, these are the highest density SPI FRAM products currently offered by Fujitsu Semiconductor. The new products will be made available in sample quantities from the end of March 2013.
Alliance Memory Announces New High-Speed CMOS Synchronous DRAM
Alliance Memory today introduced a new high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from clock of 5.4 ns at a 7-ns clock cycle, and a fast clock rate of 143 MHz.
ASSET-Intertech e-Book: Cache-as-RAM For Board Bring-up Of Non-Booting Circuit Boards
A new e-book from ASSET InterTech, Cache-as-RAM for board bring-up of non-booting circuit boards, takes a close look at how run-control tools can employ a processor's on-chip cache memory instead of on-board RAM memory to boot non-booting prototype circuit boards.
Adaptec Enters HBA Market with First Encrypted Solutions for Secure Data Center Storage
PMC today announced further expansion of its Adaptec storage product line with the industry's first high performance, high density, low profile encrypted PCIe Gen3 host bus adapter (HBA) family. This product line is capable of executing over one million input/output operations per second with 6.6 GB/sec sustained throughput, provides 256 bit AES encryption, and offers up to 16 ports.
Alliance Memory Launches New 4M Low-Power CMOS SRAMs
Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 4M IC (512K x 8). Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns in a wide variety of package options, the AS6C4008A is optimized for low-power industrial, telecom, medical, automotive, and networking applications and is particularly well-suited for battery backup nonvolatile memory.
Micron Announces Industry's Smallest 128-Gigabit NAND Flash Device
Micron Technology has today announced the launch of the industry's smallest 128-gigabit NAND flash memory device utilizing its award-winning 20-nanometer process technology. The new 128Gb device stores three bits of information per cell, called triple-level-cell, creating a highly compact storage solution. Measuring 146mm2, the new 128Gb TLC device is more than 25 percent smaller than the same capacity of Micron's 20nm multi-level-cell NAND device.
Toshiba Samples Industry’s First Universal Flash Storage Devices
Toshiba have announced that it is now shipping of samples of its 64-gigabyte embedded NAND flash memory module equipped with a Universal Flash Storage interface. The first in the industry, the new module is fully compliant with the JEDEC UFS Ver.1.1 standard, and is designed for a wide range of digital consumer products - including smartphones and tablet PCs.
Invensas Licenses xFDTM Technology, Demonstrated in Ultrabooks at CES 2013
Invensas Corporation announced today that its new xFD DIMM-in-a-Package memory technology has been licensed to an original equipment manufacturer, and this technology will be demonstrated in Intel-based Ultrabooks at CES 2013.
Toshiba Samples Industry's First Embedded NAND Flash Memory Modules
Toshiba reveals that it has started sample shipments of a 64-gigabyte embedded NAND flash memory module, the first in the industry equipped with a UFS I/F. The module is fully compliant with the JEDEC UFS Ver.1.1 standard and is designed for application in a wide range of digital consumer products, including smartphones, tablet PCs.
Micron Sample Single-Sided DDR3 DRAM Module & TE Connectivity Release Compatible Connectors
Micron Technology and TE Connectivity today announce the availability of a Single-Sided SODIMM and a low-profile single-sided, double data rate 3 SODIMM connector solution to take advantage of the burgeoning market for Ultrabook devices, convertibles, tablets and other thin and light devices.
Toshiba Develops High Speed NANO FLASH-100 Flash Memory For ARM Core Based MCUs
Toshiba has revealed today that it has developed NANO FLASH-100 much faster access for embedded microcontrollers, based on Toshiba's original NANO FLASH. Toshiba will follow up on its first NANO FLASH-100 product, TMPM440F10XBG, with additional ARM core-based products and will continue the proactive development of flash memory technologies for embedded microcontrollers.
Microchip Expands SPI Flash Memory Portfolio With The Addition of SST25PF020B, SST25PF040B and SST25PF080B Low-Power Devices
Microchip has announced an expansion of its SPI Flash memory portfolio, with the introduction of the SST25PF020B, SST25PF040B and SST25PF080B devices. The SST25PF020B, SST25PF040B and SST25PF080B offer 2-, 4- and 8-Mbit of memory and are manufactured with Microchip's high-performance SuperFlash technology, a split-gate, NOR Flash design with thick-oxide tunneling injector for superior quality and reliability.
IDT Announces Industry’s First Complete DDR4 LRDIMM Chipset
Integrated Device Technology today announced the availability of the industry's first complete chipset for DDR4 load reduced dual inline memory modules, including both a registered clock driver and data buffer devices. With DDR4 data rates climbing to 3.2 Gb/s and higher, the clear advantages afforded by LRDIMM as a speed-scalable memory technology are expected to drive adoption across a broad array of memory-intensive computing and storage applications.
Virtium ECC SODIMM Memory Modules Proven for High-Volume MicroServers
Virtium today announced that the company's ECC SODIMM memory modules are proven for use on high-volume MicroServers. Intel has validated Virtium's ECC SODIMM modules on its Bordenville MicroServer platform, which paves the way for more mainstream applications to realize the advantages of ECC on a smaller form factor module.
Crucial DDR4 DRAM Modules Enable Next Generation Enterprise and Consumer Products
Crucial today announced its first DDR4 DRAM demonstration at CES 2013. As a global brand of Micron, the Crucial DDR4 DRAM demonstration is based on Micron's 30-nanometer technology, the 4-gigabit DDR4 x8 part is the first piece of what is expected to be the industry's most complete portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, SODIMMs and UDIMMs (standard and ECC).
Cypress Announces Creation of World’s Broadest Fast-Write Nonvolatile Memory Portfolio
Cypress Semiconductor today announced that it has integrated Ramtron International's ferroelectric random access memory products into its portfolio, offering the market's widest range of densities for fast-write nonvolatile memories. F-RAM is the industry's lowest-power nonvolatile memory, complementing Cypress's nonvolatile static random access memories, which are the world's fastest.
Micron Extends Portfolio of Phase Change Memory for Mobile Devices
Micron Technology announce the addition of a new product to its Phase Change Memory portfolio. With high-volume shipments of its 45-nanometer, 1-gigabit PCM-based multichip package solution for mobile devices well underway, the company is now sampling a 512-megabit PCM plus 512Mb LPDDR2 MCP that offers greater flexibility in terms of application requirements.
Kilopass First to Demonstrate Antifuse Non-Volatile Memory IP With Successful Test Chips on TSMC 20nm Process
Kilopass Technology have today announced that its NVM IP is the first antifuse technology to achieve successful test chips on TSMC's 20nm process. Analysis of the test chips containing Kilopass NVM IP memory modules validated manufacturability, process control tolerance and cell programming characteristics.
Fujitsu Introduces Ultra-Low-Power 16Kbit FRAM in New Small SON-8 Package
Fujitsu Semiconductor America today introduced an ultra-low-power Ferroelectric Random Access Memory in a new, smaller standard SON-8 package designed for miniaturized products. The 16Kbit FRAM MB85RC16 includes an I2C interface and features the smallest standby and operating current in its class of products.
4-MB Flash memory device for harsh environments from TI
Texas Instruments today introduced the industry's first high-temperature, nonvolatile Flash memory device for harsh environments. The SM28VLT32-HT has an operational capacity of 4 MB and eliminates the need for costly up-screening and qualification testing of industrial-grade components for temperature ranges outside data sheet specifications.
New Crucial Ballistix Low Profile Memory
Crucial has today announced the immediate availability of Crucial Ballistix Low Profile memory, which delivers a true low profile design to provide more clearance around high-end CPU coolers and improve airflow throughout the system. Designed for performance enthusiasts and small form factor computer builders with limited space, Crucial Ballistix LP memory features all the performance benefits of Ballistix memory without the height concerns of taller modules.
TDK launches GBDriver RS4 high-speed SATA controller chip
TDK has developed the GBDriver RS4 series of NAND type flash memory controllers with support for 3 Gbps serial ATA. Sales will begin in January 2013. With an effective access speed of 180 MB/sec, the GBDriver RS4 is an advanced high-speed SATA controller chip.
X-Fab and Anvo collaborate to offer Non-Volatile Memory Solutions
X-FAB Silicon Foundries and Anvo-Systems Dresden today announced a cooperative agreement to offer high-speed non-volatile memory solutions that combine SRAM, DRAM and SONOS FLASH technologies; the compact design results in a small silicon footprint that keeps device costs low.
Fujitsu's Expand FRAM V Series with Extended Wide Voltage Range
Fujitsu have unveiled a new addition to its wide voltage range Ferroelectric Random Access Memory product series (V series). The newly launched MB85RC256V offers the highest density level in the V series and is Fujitsu's first FRAM product that operates in an even wider voltage range of 2.7 V to 5.5 V, which provides even greater flexibility for customer applications.
Super Talent Expands Family of DDR3 DIMMs
Super Talent have introduced new DDR3 Mini-RDIMM, VLP RDIMM, and VLP ECC UDIMM modules designed for industrial, embedded, and sever systems. These new memory modules all feature low operating voltages and a small form factor while delivering impressive 1600MHz (PC3-12800) speeds in up to 8GB densities.
Kilopass’ Next-Generation Gusto-2 Targets Instant-On Mobile Devices
Kilopass Technology today announced Gusto-2, its second generation of code storage products, to serve the increasing numbers of new system-on-chip designs for instant-on mobile devices. The targeted SoCs perform functions, such as digital monitoring, near-field communications, and other applications serving the emerging market of Internet of things.
SK Hynix Developed Low-Voltage 4Gb Graphics DDR3
SK Hynix announced that it has developed the industry's first 20nm class 4Gb graphics DDR3 DRAM which provides power efficiency and fast speed performance. As an eco-friendly product, it is well suited for the low power laptop since it operates at a low-voltage while it offers graphics performance as the desktop level.
Cadence Executives Offer Insight on Memory Trends Impacting Cloud Computing and Mobility
Cadence has announced that it will showcase the company's expertise in memory design IP at MemCon 2012. Martin Lund, senior vice president of research and development, SoC Realization Group at Cadence, kicks off MemCon 2012 with his keynote speech, "How Cloud and Mobility are Disrupting the Memory Ecosystem" on Tuesday, September 18, from 9:30-10:00 AM.
Micron Announces Availability of 30nm DDR3L-RS Products
Micron have today announced high-volume availability of 30-nanometer reduced-power DDR3L-RS SDRAM for ultrathin computing devices and tablets. The 2-gigabit and 4Gb solutions reduce power consumption in standby to provide longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.
Quadruple Memory Capacity for Embedding Non-Volatile Data in SOCs
Kilopasshas today revealed details of its new embedded Vertical Cross-point Memory NVM IP bit cell. The new VCM bit cell quadruples the density of today's anti-fuse NVM IP bit cell. The VCM bit cell will make possible program storage where today's embedded non-volatile memory technology is cost-prohibitive or unavailable at capacities of 4Mb to 32Mb.
F-RAM Memory Module Compatible with Freescale’s Tower System
Ramtron has announced the release of its new F-RAM memory module (TWR-FRAM) that is compatible for use with Freescale Semiconductor's popular Tower System development platform. Ramtron F-RAM core memory and integrated products are ideal for applications that require high data integrity and ultra-low power consumption — aligning perfectly with Freescale's target markets in automotive, industrial, enabling technologies and networking.