INSSTE32882XV DDR3 Register from Inphi for Memory Module Applications
News Release from:
16 July 2012
Inphi has revealed its next-generation DDR3 register for memory module applications. The INSSTE32882XV DDR3 register from Inphi reduces power consumption by 20% – offering the lowest power consumption available on the market today – to help meet the critical challenge of reducing energy consumption in next-generation data centres.
Inphi’s latest DDR3 register enables data centres to operate at higher speeds and increase capacity by offering two DIMMS per channel at 2133 MT/s or three DIMMS per channel at 1866 MT/s. The INSSTE32882XV DDR3 register also delivers the industry’s lowest jitter and highest signal fidelity to provide the uptime and reliability needed in mission critical data centre environments.
“The results of testing by our customers demonstrates that Inphi’s INSSTE32882XV DDR3 register delivers the industry’s lowest power consumption – a critical requirement for next-generation data centres, cloud computing and other high-performance computing applications,” said Paul Washkewicz, vice president of Marketing, Computing and Storage at Inphi. “Designed for mid- and high-performance servers, high-performance workstations and high reliability systems, Inphi’s INSSTE32882XV allows customers to increase system capacity without a reduction in bandwidth or increase in latency.”
“Micron understands the critical need for both speed and performance in the HPC, data centre and cloud computing space and drives compelling solutions to meet these demanding requirements. By using Inphi’s latest DDR3 register in our DRAM products, we will be able to deliver superior performance, lowest power consumption and exceptional quality to our customers,” said Robert Feurle, vice president DRAM Marketing at Micron Technology, Inc.
The INSSTE32882XV is the latest member to the Inphi memory logic products. Other technical features include:
-Backward compatible on all DDR3, DDR3L and DDR3U RDIMM modules.
-Targets two DIMMs per channel at 2133 or three DIMMSs per channel at 1866.
-Supports DDR3 DRAM at 1.5V, 1.35V and 1.25V.