OKI Semiconductor, FeRAM, ROHM Group

FeRAM: The non-volatile memory solution

News Release from: ROHM Semiconductor
19 May 2011

OKI Semiconductor (part of the ROHM Group) is developing a new memory technology called ferroelectric RAM (FeRAM). This new series will amend the memory line-up of the ROHM Group, which already consists of EEPROM, DRAM and P2ROM and is presented at PCIM in Nuremberg (May 17-19, Hall 12, Booth 480).

FeRAM is a non-volatile memory that uses a ferroelectric film as a capacitor for data storage. Compared to other non-volatile memory as EEPROM and Flash is has the advantage of a much lower power consumption (1:400 or less), a high-speed writing (similar to DRAM) and a significant higher number of writing cycles (1012 times). Together with the data retention of 10 years these features enable engineers to use FeRAM in many applications, where a reliable storage of data is mandatory such as accounting, configuration and status information in consumer, industrial and car multimedia applications.

Key Features at a glance:
* Non-volatile Data Storage
* High speed for writing and reading
* Low operating power consumption
* Data Retention: 10 years (no back-up current)
* High endurance / write cycles
* 8 bit configuration
* 3.3 V supply
* Industrial temperature range -40 to +85 °C


Line-up
* 32kbit density with SPI I/F in SOP8
* 64kbit density with I2C I/F in SOP8
* 256kbit density with SPI I/F in SOP8
* 256kbit density with parallel I/F in TSOP28