Memory
Toshiba Claims Industry’s Largest Embedded NAND Flash Memory Modules
Toshiba announced the launch of a 128-gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The module is fully compliant with the latest e•MMCTM standard, and is designed for application in a wide range of digital consumer products, including smartphones, tablet PCs and digital video cameras. Samples will be available from September, and mass production will start in the fourth quarter (October to December) of 2010.
ACAL Technology & GSI cut high-speed SRAM lead-times by at least 10 weeks
ACAL Technology is offering high speed SRAM using a unique manufacturing process which will enable OEMs and CEMs to cut current lead-times of 18 to 35 weeks, from other vendors, to just 8 to 14 weeks for the second-source GSI alternatives.
Ramtron Serial 1-Mbit F-RAM Upgraded to Automotive Qualification
Ramtron announced that its FM25V10-G – a 1-Megabit (Mb), 2.0-3.6V serial F-RAM memory device – has been qualified to AEC-Q100 Grade 3 standards. This rigorous automotive-grade qualification, established by the Automotive Electronic Council's Stress Test Qualification for Integrated Circuits, expands Ramtron's portfolio of AEC-Q100 compliant memory to 15 devices, which are designed to meet the demanding requirements of the automotive market. The Grade-3 qualification ensures device operation over the automotive temperature range of -40 to +85 degrees Celsius.
Cypress Claims World's First 32-Mbit and 64-Mbit Fast Asynchronous SRAMs
Cypress Semiconductor just introduced 32-Mbit and 64-Mbit fast asynchronous SRAMs, the industry's first such devices. The new SRAMs offer very fast response times and the smallest footprint at these densities. They target applications such as storage servers, switches and routers, testing equipment, high-end security systems and military systems.
Premier Farnell gets Flash with Spansion
Premier Farnell just announced a global franchise distribution agreement with Spansion, the leading Flash memory solutions provider. The announcement is in line with the company's continuous drive to accelerate electronic design engineering growth and its internationalisation strategy. Premier Farnell and Spansion have extended an already successful US franchise agreement to provide electronic design engineers a broad portfolio of leading Flash memory solutions.
Toshiba Announces Retail Availability of World’s Fastest SD Format Memory Card
Toshiba Electronics Europe (TEE) has announced that the first shipments of the world's fastest SD format memory card to the retail channel will begin in May 2010 in Europe. The 64GByte SDXC (eXtra Capacity) product is ideal for use with Net PCs and offers high-speed read and write rates of up to 60Mbytes per second and 35Mbytes per second respectively.
ACAL Technology signs agreement with Swissbit for UK and France
ACAL Technology have signed a technical distribution agreement, covering the UK and France, with Europe's largest independent DRAM module and Flash storage manufacturer, Swissbit. The agreement will give designers of embedded and industrial products, access to Swissbit's rugged storage devices combined with ACAL Technology's extensive expertise in the design and custom assembly of products for embedded and industrial environments.
Microchip Technology Expands UNI/O EEPROM Product Line With Wafer-Level Chip-Scale and TO-92 Packages
Microchip announced that its single-I/O bus UNI/O EEPROM devices are now available in miniature, Wafer-Level Chip-Scale and TO-92 packages, in addition to the 3-pin SOT-23 package. Measuring at 0.85 mm x 1.38 mm, the Wafer-Level Chip-Scale Package (WLCSP) is approximately the size of a die and supports a manufacturing flow using standard pick-and-place machines. The long-leaded, 3-pin TO-92 package is commonly used when the manufacturing flow is a hand-assembly process, or when it is mounted directly on cable assemblies.
Toshiba Announces New USB Flash Drives, Availability of Class 4 16GByte microSDHC cards and Class 10 Certification for SDHC products
Toshiba Electronics Europe (TEE) has further expanded its range of memory products with the launch of a new family of high-quality USB Flash drives and the commercial availability of 16GByte, Class 4-compliant microSDHC cards. The company has also announced that its high-speed professional range of SD cards is now certified in accordance with the new Class 10 SD Association standard.
Mobile SDRAM range from Nu Horizons offers lower voltage and power options
ISSI's PowerSaver Mobile SDRAM range is now available from Nu Horizons. The range includes 32, 64, 128, 256 and 512Mbit mobile SDRAMs that offer lower voltage and power options than standard SDRAMs at high data rates. The PowerSaver range features low standby current with self-refresh options to maximise battery life and reduce heat in mobile device applications. 1.8, 2.5 and 3.3V options are available with industrial and commercial temperature ranges.
Innovative Silicon’s Z-RAM Technology Meets Low Voltage and Bulk Silicon Requirements of DRAM Memory Manufacturers
Innovative Silicon, Inc. (ISi), developer of the Z-RAM zero-capacitor, floating body (FB) memory technology, today announced two major breakthroughs to its Z-RAM technology. First, bit cell operating voltage has been reduced to below one volt (1V), making it the industry's lowest-voltage FB memory bit cell and the first to be on-par with traditional DRAM voltages. Second, Z-RAM technology is now constructed on bulk silicon – without the requirement for expensive silicon on insulator (SOI) substrates – by using the 3D transistor structures preferred by the major DRAM manufacturers.
Ramtron Granted Fundamental Ferroelectric RAM Patent
Ramtron announced today the issuance of U.S. Patent No. 7,672,151 entitled Method for Reading Non-volatile Ferroelectric Capacitor Memory Cell. The patent materially expands Ramtron's intellectual property portfolio.
STMicroelectronics Launches New Dual-Interface EEPROM Enabling Remote Access to Electronic Device Parameters
STMicroelectronics (NYSE: STM), a world leader in RF Memory and EEPROM ICs, has announced sample availability of the first in a new family of products that provide the flexibility to remotely program or update electronic products, anytime during their lifetime, and anywhere in the supply chain. The new devices enable manufacturers to update parameters, regionalize or activate software without connecting a programmer, or even opening the retail packaging. This pioneering way to access the memory will allow businesses to add new functions and capabilities to their products, but also reduce manufacturing costs, simplify inventory management, and respond more quickly to changing market demands.
APRO teams with ProSaleTech and PST to accelerate European expansion
APRO, Taiwan's leading manufacturer of industrial-grade NAND Flash storage devices, has teamed with European Flash memory specialists, ProSaleTech and Phoenix Systems Engineering & Technologies (PST), in order to expand and strengthen its presence in the European market.
Toshiba to enhance line-up of 32nm multi-level cell SSDs
Toshiba Corporation has announced an expanded line-up of NAND-flash-based solid state drives based on the company's 32nm Multi-Level- Cell NAND flash memories. The new drives include the industry's first 128-gigabyte Half-Slim /mSATA SG Series SSD modules, ideally suited for a variety of applications including mini-mobile and netbook PCs, and the HG Series that delivers all the high level performance and endurance essential for notebook computers and for gaming and home entertainment systems.
Toshiba Launches Highest Density Embedded NAND Flash Memory Modules
Toshiba Corporation has announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The chip is the flagship device in a new line-up of six embedded NAND flash memory modules that offer full compliance with the latest e•MMC TM standard, and that are designed for application in a wide range of digital consumer products, including smartphones, mobile phones, netbooks and digital video cameras. Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010.
Macronix claims World’s First 256Mbit Serial Flash
Macronix International continues its leadership and innovation in the Serial Flash market by announcing the world's first 256-megabit(Mbit) Serial Flash product. This new 256Mbit product, MX25L25635E, will allow system designers and manufacturers to offer greater functionality and performance in their products.
SST - Low-Voltage, High-Speed Quad I/O Serial Flash Memory
SST today announced the industry's first 1.8V, high-speed quad-bit serial flash memory. Featuring an 80 MHz operating frequency and a specialized instruction set, the new 26WF Series Serial Quad I/O (SQI) family of 4-bit multiplexed I/O serial interface devices enables execute-in-place (XIP) capability, allowing programs to be stored and executed directly from the flash memory without the need for code shadowing on an SRAM.
Cypress Claims First 65-nm 144-Mbit SRAMs
Cypress Semiconductor has announced the industry's first monolithic SRAMs at 144-Mbit densities, the latest members of its 65-nm SRAM family. The new 144-Mbit QDRII, QDRII , DDRII and DDRII memories leverage 65-nm process technology developed with foundry partner UMC. They feature the market's fastest available clock speed of 550 MHz and a total data rate of 80 Gbps in a 36-bit I/O width QDRII device, and consume half the power of 90-nm SRAMs.
Cypress Expands Leading Non-Volatile SRAM Portfolio with New Serial Family And Adds Integrated Real-Time Clock Capability
Cypress Semiconductor has introduced a new 1-Mbit Serial non-volatile Static Random Access Memory (nvSRAM) family and new 4-Mbit and 8-Mbit nvSRAMs with an integrated real-time clock (RTC). Cypress's nvSRAMs are manufactured on its S8™ 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded non-volatile memory technology, enabling greater densities and improved access times and performance. nvSRAMs are ideal solutions for applications requiring absolute non-volatile data security such as RAID systems, industrial control and automation (e.g. PLCs, motion control, motor drives and robotics), single board computers, POS terminals, eMetering, automotive, medical and data communication systems.
AGIGA Tech Claims Highest-Density Battery-Free Non-Volatile RAM System for Applications Needing Critical Data Back-Up
AGIGA Tech Inc., a subsidiary of Cypress Semiconductor Corp., today introduced what it says is the market's highest-density, high-speed non-volatile RAM system. The AGIGARAM non-volatile system's (NVS) new CAPRI family delivers densities between 256 megabytes (2048 megabits) and 2 gigabytes (16 gigabits). The easy-to-use, turnkey family leverages a DDR2 SDRAM interface to deliver speeds up to 800 MHz with peak transfer rates equivalent to DRAMs.
Pulsic tools deployed by Toshiba Corporation for layout of next generation Flash Memory
Pulsic Limited has announced that Toshiba Corporation will be extending its deployment of Pulsic tools and services in order to maximize efficiency and quality of results for the layout of their next generation Flash Memory designs.
ACAL Technology cuts SRAM lead-times and future-proofs designs against loss of supply
ACAL Technology announce a new cross-matching service designed to eliminate extended lead-times for high-speed SRAM, and to future-proof designs by second-sourcing fit, form and function alternatives to virtually any existing SRAM.
Ramtron extends V-Family product line with serial 256-Kilobit F-RAM
Ramtron International Corporation, the leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, has announced two new serial nonvolatile F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The 256-Kilobit (Kb) devices, which are part of Ramtron's V-Family of F-RAM products, include the FM24V02, a two-wire (I2C) interface and the FM25V02 with serial peripheral interface (SPI).
Ramtron - 8-Megabit parallel nonvolatile F-RAM memory
Ramtron has announced the availability of its 8-Megabit (Mb) F-RAM memory in a streamlined FBGA package. The FM23MLD16 is an 8-Mbit, 3-volt, parallel nonvolatile RAM in a 48-pin Fine-Pitch Ball Grid Array (FBGA) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM23MLD16 targets industrial control systems such as robotics, network RAID storage solutions, multi-function printers, auto navigation systems, and a host of other SRAM-based system designs.
Renesas Introduces SRAM Family with Fast Operating Speed for Next-generation Communication Networks
Renesas Technology Europe has announced the 72-Mbit Quad Data Rate II+ (QDR II+) and Double Data Rate II+ (DDRII+) high-speed SRAM product family for use in high-end routers and switches in next-generation communication networks. These SRAM products achieve the industry's fastest operating speed and are compliant with the QDR Consortium industry standard. The new family also includes 72-Mbit QDRII and DDR II SRAM devices. The full range of devices, consisting of multiple speeds and configurations, will be introduced from August 2009.
STMicroelectronics Delivers 512-Kbit Serial EEPROMs in 2 x 3mm Package Outline
STMicroelectronics has leveraged its advanced non-volatile memory technology to deliver an industry first with two new 512-Kbit devices that offer the highest density memories available in the industry-standard 2 x 3 x 0.6mm 8-pin Micro Leadframe Package (MLP). Pin compatibility with memories of lower density allows designers to upgrade products quickly and efficiently by changing devices without redesigning the board.
Ramtron expands F-RAM Serial memory line with 32-Kilobit device
Ramtron International has announced the FM24CL32, a serial nonvolatile RAM that offers high-speed read/write performance, low voltage operation, and superior data retention. The FM24CL32 features 32Kb nonvolatile memory, 2.7 to 3.6-volt operation in an 8-pin SOIC package that uses two-wire (I2C) protocol. The FM24CL32 features fast access, NoDelay writes, virtually unlimited read/write cycles (1E14), and low power consumption. The FM24CL32 is a direct hardware replacement for serial EEPROM memory used in industrial controls, metering, medical, military, gaming, and computing applications, among others.
Ramtron gets Grade 1 automotive qualification for nonvolatile state savers
Ramtron International has announced that two of its nonvolatile state savers, the FM1105-GA and FM1106-GA, have received AEC-Q100 Grade 1 qualification. The state saver device saves the state of signals on demand and restores them to the correct state automatically upon power up. F-RAM technology uniquely enables this capability due to its fast write time, virtually unlimited write endurance, and low-power requirements.
Toshiba to launch world’s first 32nm process NAND flash memory
Toshiba will reinforce its leadership in the development and fabrication of high density NAND flash memory when it starts shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit single chips, offering the largest density of any NAND flash chip, are available from today, and 16Gb chip products, the current mainstream density, will be available in July in Japan. The 32Gb chips will first be applied to memory cards and USB memories and subsequently extended to embedded products.
Power efficient 512-Kilobit and 1-Megabit Serial F-RAM V-Family memory
Ramtron has launched two more devices in a family of new parallel and serial F-RAM products that offer higher-speed read/write performance, lower voltage operation, and optional device features. The newest devices in Ramtron's V-Family of F-RAM products are the 512-Kilobit FM24V05, and the 1-Megabit FM24V10. The new products are 2.0 to 3.6-volt, serial nonvolatile RAMs in 8-pin SOIC packages that use the two-wire (I2C) protocol.
Microchip Expands Serial EEPROM Product Line
Microchip announces several new I2C serial EEPROM devices in small packages. The company has unveiled a series of 4, 64 and 128kbit serial EEPROMs in a innovative Waver-Level Chip Scale Package (WLCSP). Additionally, the company introduced the industry's first 1 and 2kbit I2C serial EEPROMs in a 5-pin SC-70 package, and the industry's first 32 and 64kbit serial EEPROMs in a 5-pin SOT-23 package. The small, innovative devices complement industry trends towards smaller and more sophisticated designs and are ideal for a wide range of portable and consumer-electronic applications.
Microchip Claims Industry’s Lowest Voltage EEPROM Devices
Microchip has announced a series of I2CTM EEPROM devices with the lowest operating voltage available on the market. The 24VLXX series of devices has an operating voltage down to 1.5V for both read and write operations, with a very low operating current of less than 400µA.
Toshiba Advances NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology
Toshiba has announced breakthroughs in multi-bit-per-cell technology for NAND flash memories that will bring advances in chip densities and cost savings to next generation devices. In the 32 nanometer (nm) generation, Toshiba has realized a 3-bit-per-cell 32 gigabit (Gb) chip with the world-smallest die size, and smaller than a 2-bit-per-cell 16Gb chip fabricated with 43nm technology, which is currently in the market. The cutting-edge chip will be mass produced in the second half of CY2009. The company has also fabricated the world's first 64Gb chip that applies 4-bit-per-cell technology at the 43 nm process generation.
Ramtron's foundry agreement with IBM
U.S. semiconductor maker Ramtron has announced that it has entered into a foundry services agreement with IBM. The companies plan to install Ramtron's F-RAM semiconductor process technology in IBM's Burlington, Vermont, advanced wafer manufacturing facility. Once installed, the new foundry supply will serve as a foundation for the introduction of new and cost effective high-performance F-RAM semiconductor products.
Innovative Silicon To Present Floating Body Memory Array Results At ISSCC
Innovative Silicon, Inc. (ISi), developer of the Z-RAM zero-capacitor floating body memory technology has announced the upcoming delivery of a presentation titled "A 2ns-Read-Latency 4MB Embedded Floating Body Memory Macro in 45nm SOI Technology" in collaboration with AMD at the International Solid State Circuits Conference (ISSCC).
Ramtron announces low power 256-Kilobit Serial F-RAM
Ramtron has announced the FM24L256, a 256Kb, 2.7- to 3.6-volt nonvolatile F-RAM memory device with a high-speed serial I2C memory interface. The FM24L256 provides high-performance data collection in a tiny, 8-pin package, cutting costs and board space in a range of applications from multi-function printers to industrial motor controllers.
Ramtrom's FM22LD16 FBGA package option for 4-megabit parallel nonvolatile F-RAM memory
Ramtron has announced the availability of its 4-megabit (Mb) F-RAM memory in a streamlined FBGA package. The FM22LD16 is a 4Mb, 3-volt, parallel nonvolatile RAM in a 48-pin ball grid array (FBGA) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM22LD16 targets industrial control systems such as robotics, network and data storage applications, multi-function printers, auto navigation systems and a host of other SRAM-based system designs. Ramtron's 4Mb parallel F-RAM is also available in a 44-pin thin small outline plastic (TSOP) package.
Microchip's Stand-Alone Serial SRAM Devices
Microchip has announced a family of 8- and 32-kByte stand-alone serial SRAM devices designed to increase a system's available RAM through adding small, inexpensive external devices. The 23A640, 23K640 (23 x 640), 23A256 and 23K256 (23 x 256) devices feature a familiar, industry standard SPI interface, providing increased design flexibility while reducing design and production costs.
Toshiba, IBM, and AMD Claim World’s Smallest FinFET SRAM Cell with High-k/Metal Gate
Toshiba Corporation, IBM, and AMD have announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world's smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs).
