APT announces low noise silicon detector/preamplifier

News Release from: AP Technologies Ltd.
16/04/2008

APT is pleased to announce the international release of Opto Diode Corporation's ODA-5W-100k which combines a high responsivity 5 mm² active area silicon photodiode with a low noise preamplifier with 100 kOhm transimpedance gain.

The standard red/NIR-enhanced device has a responsivity of 63 V/µW at 940 nm – visible enhanced versions can also be supplied. This high performance device has a frequency response of 500 kHz (min.) with a low Offset Voltage (±1 mV) and Dark Offset Noise of 1 mV rms.

The ODA-5W-100k operates from ±5 to ±15 V and is supplied in a hermetically sealed TO-39 can with operating and storage temperature ranges of -25°C to +100°C.

Martin Sharratt - Managing Director of APT said “the ODA-5W-100k is the first of a number of new high performance detector/preamplifier combinations to be released by Opto Diode in 2008 and provides a platform for a wide range of application-specific solutions”.

Applications for these devices are low-light-level (less than 1 mW) tasks where electrical noise can affect the photodiode signal if the detector and amplifier are separate components on a circuit board. Typical examples are medical diagnostics; test & measurement; fluorescence detection and spectroscopy.

The ODA-5W-100k is manufactured at Opto Diode’s state-of-the-art facility in Newbury Park, California in their Class 1000 cleanroom and high volume fully-automated packaging facility.