Imec Prominently Presents at IEDM 2012
News Release from:
17 September 2012
Imec announced today a high number of engagements at this year's IEEE International Electron Device Meeting in San Francisco, December 8-12, 2012.Solidifying its leading position as a global R&D center solving key challenges of the International Technology Roadmap for Semiconductors, imec will present one plenary talk, feature two invited presentations, deliver one tutorial, and present 9 papers from imec researchers as first authors and 5 papers as co-author.
“We are delighted by the IEDM committee’s recognition, which not only rewards our researchers, but proves the value of their work,” said Luc Van den hove, CEO at imec. “It is imec’s ambition to stay at the forefront of research to further support the global semiconductor industry with innovative solutions.”
Imec’s papers at IEDM 2012 include:
· Plenary—Luc Van den hove, CEO at imec—Ultimate Transistor and Memory Technologies: Core of a Sustainable Society
· Invited paper—Kurt Ronse et al. —Opportunities and Challenges in Device Scaling by the Introduction of EUV Lithography
· Invited paper—Eddy Simoen et al. —Insights in low frequency noise of advanced and high-mobility channel transistors
· Tutorial—Mustafa Badaroglu—Scaling Challenges Analog Electronics
-Quantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memories, Toledano-Luque et al.
-Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation, Chen et al.
-Ultra thin hybrid floating gate and high-k dielectric as IGD enabler of highly scaled planar NAND flash technology, Kar et al.
-Beyond interface: the impact of oxide borde traps on InGaAs and Ge n-MOSFETs, Lin et al.
-Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs, Togo et al.
-Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14nm node and beyond, Eneman et al.
-Impact of Through Silicon Via Induced Mechanical Stress on Fully Depleted Bulk FinFET Technology, Guo et al.
-Standard cell level parasitic assessment in 20nm BPL and 14nm BFF, Schuddinck et al.
More than Moore
-UHF IGZO Schottky diode, Chasin et al.