IGBTs, International Rectifier

600V Trench IGBTs Said To Reduce Power Dissipation Up to 30 Percent in UPS and Solar Inverter Applications

News Release from: International Rectifier
04/03/2008

International Rectifier has launched a family of 600V insulated gate bipolar transistors (IGBTs) that reduces power dissipation by up to 30 percent in uninterruptible power supply (UPS) and solar inverter applications up to 3 kW. The new application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses, and are optimized for switching at 20 kHz with low short circuit requirements, enabling higher efficiency power conversion in UPS and solar inverter applications.

Traditionally, IGBT devices have excessive switching losses at the frequencies used in UPS and solar inverters. IR’s new Trench IGBT devices have lower switching energy coupled with low conduction losses and provide higher efficiency, reducing the size of the unit and the cost of power generation to the end user.

Co-packaged with ultrafast soft recovery diodes, the new family of IGBTs has lower collector-to-emitter saturation voltage (VCE(on)) and total switching energy (ETS) than punch-through (PT) and non-punch-through (NPT) type IGBTs. In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.