MOSFET, Vishay, TrenchFET Gen III Si7192DP

30-V TrenchFET Power MOSFET from Vishay

News Release from: Vishay
26/03/2008

The first device in a new third-generation TrenchFET power MOSFET family offering what the company says is record-breaking specifications for on-resistance and on-resistance times gate charge has been released by Vishay Intertechnology, Inc.

The new TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98, a new industry record for any VDS=30V, VGS=20V device in an SO-8 footprint. Compared to the closest competing devices optimized for low conduction losses and low switching losses respectively, these represent the best available specifications on the market. Lower on-resistance and lower gate charge translate into lower conduction and switching losses respectively.

The Vishay Siliconix Si7192DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and a wide range of systems using point-of-load (POL) power conversion.

Siliconix was the industry's first supplier to introduce Trench power MOSFETs. The company’s TrenchFET IP includes numerous patents, including fundamental technology patents dating from the early 1980s. Each new generation of TrenchFET technology yields products that raise the bar for power MOSFET performance in a wide range of computing, communications, consumer electronics, and many other applications.

Samples and production quantities of the Si7192DP are available now, with lead times of 10 to 12 weeks for large orders.